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| RO-P-DS-3066 - - 400mW Ku-Band Power Amplifier 15.5-18.0 GHz Preliminary Information MAAPGM0046-DIE Features 15.5-18.0 GHz GaAs MMIC Amplifier 400 mW Saturated Output Power Level 15.5-18.0 GHz Operation Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG(R) MESFET Process Primary Applications Point-to-Point Communications Ku Satellite Communications Description The MAAPGM0046-DIE is a 3-stage 400mW power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Each device is 100% RF tested on wafer to ensure performance compliance. The part is fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG(R)) MESFET Process. This process provides polyimide scratch protection. Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 8V, VGG = -1.8V, Pin = 12 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Output VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 3rd Order Intermodulation Distortion, Single Carrier Level = 18 dBm 5th Order Intermodulation Distortion, Single Carrier Level = 18 dBm Symbol f POUT PAE P1dB G VSWR VSWR IGG IDD OTOI NF IM3 IM5 Typical 15.5 -18.0 26 11 25 16 3:1 2:1 <2 < 600 32 8 34 47 mA mA dBm dB dBc dBc Units GHz dBm % dBm dB 1. TB = MMIC Base Temperature RO-P-DS-3066 - - 2/6 400mW Ku-Band Power Amplifier Maximum Operating Conditions 1 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG MAAPGM0046-DIE Absolute Maximum 17.0 +12.0 -3.0 660 5.1 180 -55 to +150 Units dBm V V mA W C C 1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Drain Voltage Gate Voltage Input Power Junction Temperature MMIC Base Temperature Symbol VDD VGG PIN TJ TB Min 4.0 -2.3 Typ 8.0 -2.0 12.0 Max 10.0 -1.5 15.0 150 Note 2 Unit V V dBm C C 2. Maximum MMIC Base Temperature = 150C - 15.8C/W * VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -1.8 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8.0 V. 3. Adjust VGG to set IDQ, (approximately @ -1.8 V). 4. Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3066 - - 3/6 400mW Ku-Band Power Amplifier 40 MAAPGM0046-DIE 28 POUT PAE 35 24 30 20 POUT (dBm) 20 12 15 8 10 4 5 15.0 15.5 16.0 16.5 17.0 17.5 0 18.0 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 12dBm. 40 35 30 POUT PAE 30 25 20 15 10 5 0 -5 4 5 6 7 8 9 10 POUT (dBm) 25 20 15 10 5 Drain Voltage (V) Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 16.5 GHz. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. PAE (%) 25 16 RO-P-DS-3066 - - 4/6 400mW Ku-Band Power Amplifier 40 35 VDD = 4 VDD = 8 MAAPGM0046-DIE VDD = 6 VDD = 10 30 P1dB (dBm) 25 20 15 10 5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 Frequency (GHz) Figure 3. 1dB Compression Point vs. Drain Voltage 30 GAIN INPUT VSW R 6 25 OUTPUT VSW R 5 Gain (dB) 20 4 15 3 10 2 5 15.0 15.5 16.0 16.5 17.0 17.5 1 18.0 Frequency (GHz) Figure 4. Small Signal Gain and VSWR vs. Frequency at VDD = 8V. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. VSWR RO-P-DS-3066 - - 5/6 400mW Ku-Band Power Amplifier MAAPGM0046-DIE Mechanical Information Chip Size: 3.000 x 1.824 x 0.075 mm 1.50mm. 0.14mm. (118 x 72 x 3 mils) 2.87mm. GND:G 3.00mm. 1.82mm. 1.66mm. GN D :G GN D:G GND :G G ND:G VDD GND:G GN D :G GND:G GND:G GND:G GND: G GN D :G GN D:G GND :G GN D:G GND:G GND:G GND:G G ND:G GND :G 0.86mm. IN GN D:G GND :G GND :G GN D :G GND:G GN D:G GND :G GN D:G GN D:G GN D :G GN D:G GN D:G GN D:G D:G GN GN D:G G N D :G GN D:G GND :G GND :G GND :G GND :G OUT 0.86mm. GN D :G GN D:G GN D:G GN D:G G ND :G G ND :G GN D:G GND:G GN D:G GND:G GND :G GND :G GND :G GN D:G GND:G GND:G GND:G 0.16mm. 0 VGG GN D:G GN D :G GND :G GND:G GND :G GN D:G 0 Figure 5. Die Layout Chip edge to bond pad dimensions are shown to the center of the bond pad. 1.50mm. Bond Pad Dimensions Pad Size (m) 100 x 200 200 x 150 150 x 150 Size (mils) 4x8 8x6 6x6 RF: IN, OUT DC: VDD DC: VGG Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3066 - - 6/6 400mW Ku-Band Power Amplifier MAAPGM0046-DIE VDD 0.1 F 100 pF GND:G VDD GND:G GND:G GND:G GN D:G GND:G GND:G GND:G GND:G GND:G GND:G GND:G GN D:G RFIN GND:G GND:G GN D:G RFOUT GND:G GND:G GN D:G GND:G IN GN D: G GND:G GN D:G GND:G G ND:G GND :G OUT GND :G GN D: G GND:G GND:G GND:G GND:G GN D:G VGG GND:G GN D:G GND:G GND:G 100 pF 150 VGG 0.1 F Figure 6. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Specifications subject to change without notice. Email: macom_adbu_ics@tycoelectronics.com North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. GND:G GN D: G GN D: G GND:G GN D: G G D: GN GND:G GND:G GND:G GND :G GND :G GND :G GND:G GND:G GND:G GND:G GND:G GND:G GN D:G GND :G GND :G GN D: G GND:G GND:G GN D:G GND:G GND:G |
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